Gate capacitance performance of p-type InSb and GaSb nanowires

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URI: http://hdl.handle.net/10481/58489
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Author
Martínez Blanque, Celso Jesús; García Ruiz, Francisco Javier; Donetti, Luca; Toral López, Alejandro; González-Medina, Jose María; González Marín, Enrique; Godoy Medina, Andrés; Gámiz Pérez, Francisco Jesús
Materia
III-V semiconductors
 
P-type semiconductors
 
Gate capacitance
 
Date
2017-04-05
Sponsorship
This work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873.
Abstract
The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to those achieved for Si and Ge NWs, and the contribution of each of the capacitance terms (quantum and inversion layer capacitances) is thoroughly analyzed.
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