@misc{10481/58489,
year = {2017},
month = {4},
url = {http://hdl.handle.net/10481/58489},
abstract = {The electrostatic behavior of p-type nanowires
made of antimonide III-V materials (InSb and GaSb) is
analyzed by means of a self-consistent solution of the
Poisson and Schrödinger equations, under the k·p
approximation. The results are compared to those achieved
for Si and Ge NWs, and the contribution of each of the
capacitance terms (quantum and inversion layer
capacitances) is thoroughly analyzed.},
organization = {This  work  was  supported  by  the  Spanish  Government under   the   Project   TEC2014-59730-R.   C.   Martínez-Blanque  acknowledges  the Junta  de  Andalucía  support under project P09-TIC4873.},
keywords = {III-V semiconductors},
keywords = {P-type  semiconductors},
keywords = {Gate capacitance},
title = {Gate capacitance performance of p-type InSb and GaSb nanowires},
author = {Martínez Blanque, Celso Jesús and García Ruiz, Francisco Javier and Donetti, Luca and Toral López, Alejandro and González-Medina, Jose María and González Marín, Enrique and Godoy Medina, Andrés and Gámiz Pérez, Francisco Jesús},
}