Gate capacitance performance of p-type InSb and GaSb nanowires Martínez Blanque, Celso Jesús García Ruiz, Francisco Javier Donetti, Luca Toral López, Alejandro González-Medina, Jose María González Marín, Enrique Godoy Medina, Andrés Gámiz Pérez, Francisco Jesús III-V semiconductors P-type semiconductors Gate capacitance The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to those achieved for Si and Ge NWs, and the contribution of each of the capacitance terms (quantum and inversion layer capacitances) is thoroughly analyzed. 2020-01-07T10:54:50Z 2020-01-07T10:54:50Z 2017-04-05 info:eu-repo/semantics/conferenceObject http://hdl.handle.net/10481/58489 eng info:eu-repo/semantics/openAccess