Mostrar el registro sencillo del ítem

dc.contributor.authorMartínez Blanque, Celso Jesús
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorDonetti, Luca 
dc.contributor.authorToral López, Alejandro 
dc.contributor.authorGonzález-Medina, Jose María
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2020-01-07T10:54:50Z
dc.date.available2020-01-07T10:54:50Z
dc.date.issued2017-04-05
dc.identifier.urihttp://hdl.handle.net/10481/58489
dc.description.abstractThe electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to those achieved for Si and Ge NWs, and the contribution of each of the capacitance terms (quantum and inversion layer capacitances) is thoroughly analyzed.es_ES
dc.description.sponsorshipThis work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873.es_ES
dc.language.isoenges_ES
dc.subjectIII-V semiconductorses_ES
dc.subjectP-type semiconductorses_ES
dc.subjectGate capacitancees_ES
dc.titleGate capacitance performance of p-type InSb and GaSb nanowireses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


Ficheros en el ítem

[PDF]

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem