TY  - GEN 
AU  - Martínez Blanque, Celso Jesús
AU  - García Ruiz, Francisco Javier
AU  - Donetti, Luca
AU  - Toral López, Alejandro
AU  - González-Medina, Jose María
AU  - González Marín, Enrique
AU  - Godoy Medina, Andrés
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2017
UR  - http://hdl.handle.net/10481/58489
AB  - The electrostatic behavior of p-type nanowires
made of antimonide III-V materials (InSb and GaSb) is
analyzed by means of a self-consistent solution of the
Poisson and Schrödinger equations, under the k·p
approximation. The results are compared to...
LA  - eng
KW  - III-V semiconductors
KW  - P-type  semiconductors
KW  - Gate capacitance
TI  - Gate capacitance performance of p-type InSb and GaSb nanowires
ER  -