Hole mobility of cylindrical GaSb nanowires

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URI: http://hdl.handle.net/10481/58490
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Auteur
García Ruiz, Francisco Javier; González Marín, Enrique; Martínez Blanque, Celso Jesús; Tienda Luna, Isabel María; González-Medina, Jose María; Toral López, Alejandro; Donetti, Luca; Godoy Medina, Andrés
Materia
III-antimonides
 
GaSb
 
Hole mobility
 
K·p simulation
 
Charge screening
 
Phonons
 
Surface roughness
 
III-V materials
 
Date
2018-03-20
Referencia bibliográfica
F.G. Ruiz, Hole mobility of cylindrical GaSb nanowires, EUROSOI-ULIS Granada. 2018
Patrocinador
The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R.
Résumé
The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.
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