Hole mobility of cylindrical GaSb nanowires García Ruiz, Francisco Javier González Marín, Enrique Martínez Blanque, Celso Jesús Tienda Luna, Isabel María González-Medina, Jose María Toral López, Alejandro Donetti, Luca Godoy Medina, Andrés III-antimonides GaSb Hole mobility K·p simulation Charge screening Phonons Surface roughness III-V materials The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms. 2020-01-07T11:04:00Z 2020-01-07T11:04:00Z 2018-03-20 info:eu-repo/semantics/conferenceObject F.G. Ruiz, Hole mobility of cylindrical GaSb nanowires, EUROSOI-ULIS Granada. 2018 http://hdl.handle.net/10481/58490 eng info:eu-repo/semantics/openAccess