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Hole mobility of cylindrical GaSb nanowires

dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorMartínez Blanque, Celso Jesús
dc.contributor.authorTienda Luna, Isabel María 
dc.contributor.authorGonzález-Medina, Jose María
dc.contributor.authorToral López, Alejandro 
dc.contributor.authorDonetti, Luca 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2020-01-07T11:04:00Z
dc.date.available2020-01-07T11:04:00Z
dc.date.issued2018-03-20
dc.identifier.citationF.G. Ruiz, Hole mobility of cylindrical GaSb nanowires, EUROSOI-ULIS Granada. 2018es_ES
dc.identifier.urihttp://hdl.handle.net/10481/58490
dc.description.abstractThe hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.es_ES
dc.description.sponsorshipThe authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R.es_ES
dc.language.isoenges_ES
dc.subjectIII-antimonideses_ES
dc.subjectGaSbes_ES
dc.subjectHole mobilityes_ES
dc.subjectK·p simulationes_ES
dc.subjectCharge screeninges_ES
dc.subjectPhononses_ES
dc.subjectSurface roughnesses_ES
dc.subjectIII-V materialses_ES
dc.titleHole mobility of cylindrical GaSb nanowireses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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