@misc{10481/58490,
year = {2018},
month = {3},
url = {http://hdl.handle.net/10481/58490},
abstract = {The hole mobility of GaSb field-effect
transistor nanowires is analyzed as a function of the device
orientation and gate bias. To this purpose, a self-consistent
Poisson-Schrödinger solver with an 88 k·p Hamiltonian is
employed to study the electrostatics, and the hole mobility
is calculated under the momentum relaxation time solution
of the Boltzmann transport equation including the main
high-field scattering mechanisms.},
organization = {The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R.},
keywords = {III-antimonides},
keywords = {GaSb},
keywords = {Hole mobility},
keywords = {K·p simulation},
keywords = {Charge screening},
keywords = {Phonons},
keywords = {Surface roughness},
keywords = {III-V materials},
title = {Hole mobility of cylindrical GaSb nanowires},
author = {García Ruiz, Francisco Javier and González Marín, Enrique and Martínez Blanque, Celso Jesús and Tienda Luna, Isabel María and González-Medina, Jose María and Toral López, Alejandro and Donetti, Luca and Godoy Medina, Andrés},
}