TY  - GEN 
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
AU  - Martínez Blanque, Celso Jesús
AU  - Tienda Luna, Isabel María
AU  - González-Medina, Jose María
AU  - Toral López, Alejandro
AU  - Donetti, Luca
AU  - Godoy Medina, Andrés
PY  - 2018
UR  - http://hdl.handle.net/10481/58490
AB  - The hole mobility of GaSb field-effect
transistor nanowires is analyzed as a function of the device
orientation and gate bias. To this purpose, a self-consistent
Poisson-Schrödinger solver with an 88 k·p Hamiltonian is
employed to study the...
LA  - eng
KW  - III-antimonides
KW  - GaSb
KW  - Hole mobility
KW  - K·p simulation
KW  - Charge screening
KW  - Phonons
KW  - Surface roughness
KW  - III-V materials
TI  - Hole mobility of cylindrical GaSb nanowires
ER  -