Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs

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URI: http://hdl.handle.net/10481/58474
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Author
García Ruiz, Francisco Javier; González Marín, Enrique; Godoy Medina, Andrés; Tienda Luna, Isabel María; Martínez Blanque, Celso Jesús; Gámiz Pérez, Francisco Jesús
Date
2013-06-09
Referencia bibliográfica
F.G. Ruiz, Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs, SNW 2013 - IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2013
Sponsorship
This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5.
Abstract
This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.
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