@misc{10481/58474,
year = {2013},
month = {6},
url = {http://hdl.handle.net/10481/58474},
abstract = {This work studies the influence of the back-gate bias on the
threshold voltage (V T ) and the electron mobility of silicon
trigate devices over ultra-thin-box. The analysis allows us to
confirm the possibility of achieving body factors higher than
γ=0.1 as long as the width is increased and the height is
reduced as much as possible. Also, we have demonstrated the
impact of the back-gate biasing on the electron mobility using
state-of-the-art scattering models for 2D confined devices.},
organization = {This work was supported by the Spanish Government under Project FIS2011-26005 and  the  FPU  program, the  Junta  de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5.},
title = {Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs},
author = {García Ruiz, Francisco Javier and González Marín, Enrique and Godoy Medina, Andrés and Tienda Luna, Isabel María and Martínez Blanque, Celso Jesús and Gámiz Pérez, Francisco Jesús},
}