Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs García Ruiz, Francisco Javier González Marín, Enrique Godoy Medina, Andrés Tienda Luna, Isabel María Martínez Blanque, Celso Jesús Gámiz Pérez, Francisco Jesús This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices. 2020-01-07T09:54:50Z 2020-01-07T09:54:50Z 2013-06-09 info:eu-repo/semantics/conferenceObject F.G. Ruiz, Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs, SNW 2013 - IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2013 http://hdl.handle.net/10481/58474 eng info:eu-repo/semantics/openAccess