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dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGonzález-Marín, Enrique
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorTienda Luna, Isabel María 
dc.contributor.authorMartínez Blanque, Celso Jesús
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2020-01-07T09:54:50Z
dc.date.available2020-01-07T09:54:50Z
dc.date.issued2013-06-09
dc.identifier.citationF.G. Ruiz, Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs, SNW 2013 - IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2013es_ES
dc.identifier.urihttp://hdl.handle.net/10481/58474
dc.description.abstractThis work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.es_ES
dc.description.sponsorshipThis work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5.es_ES
dc.language.isoenges_ES
dc.titleBack-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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