Mostrar el registro sencillo del ítem
Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs
dc.contributor.author | García Ruiz, Francisco Javier | |
dc.contributor.author | González Marín, Enrique | |
dc.contributor.author | Godoy Medina, Andrés | |
dc.contributor.author | Tienda Luna, Isabel María | |
dc.contributor.author | Martínez Blanque, Celso Jesús | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2020-01-07T09:54:50Z | |
dc.date.available | 2020-01-07T09:54:50Z | |
dc.date.issued | 2013-06-09 | |
dc.identifier.citation | F.G. Ruiz, Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs, SNW 2013 - IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 2013 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/58474 | |
dc.description.abstract | This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices. | es_ES |
dc.description.sponsorship | This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5. | es_ES |
dc.language.iso | eng | es_ES |
dc.title | Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs | es_ES |
dc.type | conference output | es_ES |
dc.rights.accessRights | open access | es_ES |