TY  - GEN 
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
AU  - Godoy Medina, Andrés
AU  - Tienda Luna, Isabel María
AU  - Martínez Blanque, Celso Jesús
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2013
UR  - http://hdl.handle.net/10481/58474
AB  - This work studies the influence of the back-gate bias on the
threshold voltage (V T ) and the electron mobility of silicon
trigate devices over ultra-thin-box. The analysis allows us to
confirm the possibility of achieving body factors higher...
LA  - eng
TI  - Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs
ER  -