InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
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Navarro Moral, Carlos; Navarro Moral, Santiago; Márquez González, Carlos; Donetti, Luca; Sampedro Matarín, Carlos; Karg, Siegfried; Riel, H; Gámiz Pérez, Francisco JesúsEditorial
IEEE
Materia
Capacitor-less 1T-DRAM MSDRAM InGaAs
Date
2018-07-24Referencia bibliográfica
Navarro, C., Navarro, S., Marquez, C., Donetti, L., Sampedro, C., Karg, S., ... & Gamiz, F. (2018). InGaAs capacitor-less DRAM cells TCAD demonstration. IEEE Journal of the Electron Devices Society, 6, 884-892.
Sponsorship
This work was supported by H2020 REMINDER European under Grant 687931, and in part by the Spanish National Projects under Grant TEC2014-59730 and Grant PCIN-2015-146.Abstract
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic
RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify
the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters
(such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps)
and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented.
Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the
advantages and drawbacks.