InGaAs Capacitor-Less DRAM Cells TCAD Demonstration Navarro Moral, Carlos Navarro Moral, Santiago Márquez González, Carlos Donetti, Luca Sampedro Matarín, Carlos Karg, Siegfried Riel, H Gámiz Pérez, Francisco Jesús Capacitor-less 1T-DRAM MSDRAM InGaAs 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented. Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks. 2019-11-18T12:49:57Z 2019-11-18T12:49:57Z 2018-07-24 info:eu-repo/semantics/article Navarro, C., Navarro, S., Marquez, C., Donetti, L., Sampedro, C., Karg, S., ... & Gamiz, F. (2018). InGaAs capacitor-less DRAM cells TCAD demonstration. IEEE Journal of the Electron Devices Society, 6, 884-892. http://hdl.handle.net/10481/57959 10.1109/JEDS.2018.2859233 eng info:eu-repo/grantAgreement/EC/FP7/687931 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess Atribución-NoComercial-SinDerivadas 3.0 España IEEE