TY  - GEN 
AU  - Navarro Moral, Carlos
AU  - Navarro Moral, Santiago
AU  - Márquez González, Carlos
AU  - Donetti, Luca
AU  - Sampedro Matarín, Carlos
AU  - Karg, Siegfried
AU  - Riel, H
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2018
UR  - http://hdl.handle.net/10481/57959
AB  - 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic
RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify
the viability of III-V meta-stable-dip RAM cells. The...
LA  - eng
PB  - IEEE
KW  - Capacitor-less
KW  - 1T-DRAM
KW  - MSDRAM
KW  - InGaAs
TI  - InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
DO  - 10.1109/JEDS.2018.2859233
ER  -