@misc{10481/57959,
year = {2018},
month = {7},
url = {http://hdl.handle.net/10481/57959},
abstract = {2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic
RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify
the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters
(such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps)
and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented.
Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the
advantages and drawbacks.},
organization = {This work was supported by H2020 REMINDER European under Grant 687931, and in part by the
Spanish National Projects under Grant TEC2014-59730 and Grant PCIN-2015-146.},
publisher = {IEEE},
keywords = {Capacitor-less},
keywords = {1T-DRAM},
keywords = {MSDRAM},
keywords = {InGaAs},
title = {InGaAs Capacitor-Less DRAM Cells TCAD Demonstration},
doi = {10.1109/JEDS.2018.2859233},
author = {Navarro Moral, Carlos and Navarro Moral, Santiago and Márquez González, Carlos and Donetti, Luca and Sampedro Matarín, Carlos and Karg, Siegfried and Riel, H and Gámiz Pérez, Francisco Jesús},
}