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InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
dc.contributor.author | Navarro Moral, Carlos | |
dc.contributor.author | Navarro Moral, Santiago | |
dc.contributor.author | Márquez González, Carlos | |
dc.contributor.author | Donetti, Luca | |
dc.contributor.author | Sampedro Matarín, Carlos | |
dc.contributor.author | Karg, Siegfried | |
dc.contributor.author | Riel, H | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2019-11-18T12:49:57Z | |
dc.date.available | 2019-11-18T12:49:57Z | |
dc.date.issued | 2018-07-24 | |
dc.identifier.citation | Navarro, C., Navarro, S., Marquez, C., Donetti, L., Sampedro, C., Karg, S., ... & Gamiz, F. (2018). InGaAs capacitor-less DRAM cells TCAD demonstration. IEEE Journal of the Electron Devices Society, 6, 884-892. | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/57959 | |
dc.description.abstract | 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented. Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks. | es_ES |
dc.description.sponsorship | This work was supported by H2020 REMINDER European under Grant 687931, and in part by the Spanish National Projects under Grant TEC2014-59730 and Grant PCIN-2015-146. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/687931 | es_ES |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | Capacitor-less | es_ES |
dc.subject | 1T-DRAM | es_ES |
dc.subject | MSDRAM | es_ES |
dc.subject | InGaAs | es_ES |
dc.title | InGaAs Capacitor-Less DRAM Cells TCAD Demonstration | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1109/JEDS.2018.2859233 |
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