Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell
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AuthorNavarro Moral, Santiago; Navarro Moral, Carlos; Márquez González, Carlos; Salazar Moreira, Norberto; Galy, Philippe; Cristoloveanu, Sorin; Gámiz Pérez, Francisco Jesús
1T-DRAMZ2-FETDielectric BreakdownWeibullCapacitorlessFully depleted (FD)Reliability
SponsorshipH2020 REMINDER project (grant agreement No 687931) and TEC2017-89800-R are thanked for financial support.
The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z2-FET memory cells are characterized for the first time. The front-gate stress time is shown to significantly modulate the ON voltage and, hence, the memory window. The Weibull slope, β, indicating the device variability to breakdown, and the time to soft breakdown, α, present different trends depending on the cell geometry. This fact highlights the tradeoff between variability and reliability to account for in Z2-FET designs.