• Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell 

  Navarro Moral, Santiago; Navarro Moral, Carlos; Márquez González, Carlos; Salazar Moreira, Norberto; Galy, Philippe; [et al.] (2019-03-07)

• 3D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs 

  Navarro Moral, Carlos; Navarro Moral, Santiago; Márquez González, Carlos; Padilla, José Luis; Galy, Philippe; [et al.] (2019-05-06)

• Experimental Demonstration of Operational Z2-FET Memory Matrix 

  Navarro Moral, Santiago; Navarro Moral, Carlos; Márquez González, Carlos; El Dirani, Hassam; Galy, Philippe; [et al.] (2018-03-26)

• Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration 

  Navarro Moral, Carlos; Duan, Meng; Parihar, Mukta Singh; Adamu-Lema, Fikru; Coseman, Stefan; [et al.] (2017-10-31)

• A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations 

  Donetti, Luca; Sampedro Matarín, Carlos; García Ruiz, Francisco Javier; Godoy Medina, Andrés; Gámiz Pérez, Francisco Jesús (2019-09)

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