TY  - JOUR 
AU  - Navarro Moral, Santiago
AU  - Navarro Moral, Carlos
AU  - Márquez González, Carlos
AU  - Salazar Moreira, Norberto José
AU  - Galy, Philippe
AU  - Cristoloveanu, Sorin
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2019
UR  - http://hdl.handle.net/10481/57449
AB  - The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z2-FET memory cells are characterized for the first time. The front-gate stress time is shown to significantly modulate the ON voltage and, hence, the...
LA  - eng
KW  - 1T-DRAM
KW  - Z2-FET
KW  - Dielectric Breakdown
KW  - Weibull
KW  - Capacitorless
KW  - Fully depleted (FD)
KW  - Reliability
TI  - Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell
DO  - 10.1109/LED.2019.2915118
ER  -