Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell Navarro Moral, Santiago Navarro Moral, Carlos Márquez González, Carlos Salazar Moreira, Norberto José Galy, Philippe Cristoloveanu, Sorin Gámiz Pérez, Francisco Jesús 1T-DRAM Z2-FET Dielectric Breakdown Weibull Capacitorless Fully depleted (FD) Reliability The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z2-FET memory cells are characterized for the first time. The front-gate stress time is shown to significantly modulate the ON voltage and, hence, the memory window. The Weibull slope, β, indicating the device variability to breakdown, and the time to soft breakdown, α, present different trends depending on the cell geometry. This fact highlights the tradeoff between variability and reliability to account for in Z2-FET designs. 2019-10-21T09:05:13Z 2019-10-21T09:05:13Z 2019-03-07 info:eu-repo/semantics/article http://hdl.handle.net/10481/57449 10.1109/LED.2019.2915118 eng Grant agreement No 687931 http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License