@misc{10481/57449,
year = {2019},
month = {3},
url = {http://hdl.handle.net/10481/57449},
abstract = {The experimental time-dependent dielectric breakdown and ON voltage reliability of advanced FD-SOI Z2-FET memory cells are characterized for the first time. The front-gate stress time is shown to significantly modulate the ON voltage and, hence, the memory window. The Weibull slope, β, indicating the device variability to breakdown, and the time to soft breakdown, α, present different trends depending on the cell geometry. This fact highlights the tradeoff between variability and reliability to account for in Z2-FET designs.},
organization = {H2020  REMINDER  project  (grant  agreement  No  687931)  and  TEC2017-89800-R are thanked for financial support.},
keywords = {1T-DRAM},
keywords = {Z2-FET},
keywords = {Dielectric Breakdown},
keywords = {Weibull},
keywords = {Capacitorless},
keywords = {Fully depleted (FD)},
keywords = {Reliability},
title = {Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell},
doi = {10.1109/LED.2019.2915118},
author = {Navarro Moral, Santiago and Navarro Moral, Carlos and Márquez González, Carlos and Salazar Moreira, Norberto José and Galy, Philippe and Cristoloveanu, Sorin and Gámiz Pérez, Francisco Jesús},
}