A Schottky barrier field-effect transistor platform with variable Ge content on SOI

Fuchsberger, Andreas; Wind, Lukas; Pacheco-Sanchez, Anibal; Aberl, Johannes; Brehm, Moritz; Vogl, Lilian; Schweizer, Peter; Sistani, Masiar; Weber, Walter M.

doi:10.1016/j.sse.2025.109221

1-s2.0-S0038110125001662-main.pdf (2.230Mb)

Identificadores

URI: https://hdl.handle.net/10481/106545

DOI: 10.1016/j.sse.2025.109221

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Editorial

Elsevier

Materia

Silicon-Germanium

Schottky barrier field-effect transistor

Electron transport

Fecha

2025-12

Referencia bibliográfica

Fuchsberger, A., Wind, L., Pacheco-Sanchez, A., Aberl, J., Brehm, M., Vogl, L., Peter Schweizer, Sistani, M., & Weber, W. M. (2025). A Schottky barrier field-effect transistor platform with variable Ge content on SOI. Solid-State Electronics, 230(109221), 109221. https://doi.org/10.1016/j.sse.2025.109221

Patrocinador

Austrian Science Fund (FWF) - (10.55776 / I5383, 10.55776 / Y1238); MCIN/AEI/10.13039/501100011033 (project CNS2023-143727)

Resumen

Advancing SOI-based transistors with Ge-rich layers aims to increase device performance in terms of on-state operation and switching speed. Here, we investigate multi-heterojunction SiGe-based Schottky barrier FETs with Ge concentrations up to 75% by means of temperature- dependent electrical characterizations to identify the transport regimes and the effective barrier heights with a thermionic-emission-based model. Importantly, incorporating 33% Ge gives the best compromise for n- and p-type on-state symmetry. As the Ge concentration increases, the p-type on-state current becomes dominant, which is interesting for low-power p-type transistors.

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