TY  - GEN 
AU  - Fuchsberger, Andreas
AU  - Wind, Lukas
AU  - Pacheco-Sanchez, Anibal
AU  - Aberl, Johannes
AU  - Brehm, Moritz
AU  - Vogl, Lilian
AU  - Schweizer, Peter
AU  - Sistani, Masiar
AU  - Weber, Walter M.
PY  - 2025
UR  - https://hdl.handle.net/10481/106545
AB  - Advancing SOI-based transistors with Ge-rich layers aims to increase device performance in terms of on-state
operation and switching speed. Here, we investigate multi-heterojunction SiGe-based Schottky barrier FETs
with Ge concentrations up to 75%...
LA  - eng
PB  - Elsevier
KW  - Silicon-Germanium
KW  - Schottky barrier field-effect transistor
KW  - Electron transport
TI  - A Schottky barrier field-effect transistor platform with variable Ge content on SOI
DO  - 10.1016/j.sse.2025.109221
ER  -