A Schottky barrier field-effect transistor platform with variable Ge content on SOI Fuchsberger, Andreas Wind, Lukas Pacheco-Sanchez, Anibal Aberl, Johannes Brehm, Moritz Vogl, Lilian Schweizer, Peter Sistani, Masiar Weber, Walter M. Silicon-Germanium Schottky barrier field-effect transistor Electron transport Advancing SOI-based transistors with Ge-rich layers aims to increase device performance in terms of on-state operation and switching speed. Here, we investigate multi-heterojunction SiGe-based Schottky barrier FETs with Ge concentrations up to 75% by means of temperature- dependent electrical characterizations to identify the transport regimes and the effective barrier heights with a thermionic-emission-based model. Importantly, incorporating 33% Ge gives the best compromise for n- and p-type on-state symmetry. As the Ge concentration increases, the p-type on-state current becomes dominant, which is interesting for low-power p-type transistors. 2025-09-22T12:24:15Z 2025-09-22T12:24:15Z 2025-12 journal article Fuchsberger, A., Wind, L., Pacheco-Sanchez, A., Aberl, J., Brehm, M., Vogl, L., Peter Schweizer, Sistani, M., & Weber, W. M. (2025). A Schottky barrier field-effect transistor platform with variable Ge content on SOI. Solid-State Electronics, 230(109221), 109221. https://doi.org/10.1016/j.sse.2025.109221 https://hdl.handle.net/10481/106545 10.1016/j.sse.2025.109221 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Elsevier