@misc{10481/106545,
year = {2025},
month = {12},
url = {https://hdl.handle.net/10481/106545},
abstract = {Advancing SOI-based transistors with Ge-rich layers aims to increase device performance in terms of on-state
operation and switching speed. Here, we investigate multi-heterojunction SiGe-based Schottky barrier FETs
with Ge concentrations up to 75% by means of temperature- dependent electrical characterizations to identify
the transport regimes and the effective barrier heights with a thermionic-emission-based model. Importantly,
incorporating 33% Ge gives the best compromise for n- and p-type on-state symmetry. As the Ge concentration
increases, the p-type on-state current becomes dominant, which is interesting for low-power p-type transistors.},
organization = {Austrian Science Fund (FWF) - (10.55776 / I5383, 10.55776 /
Y1238)},
organization = {MCIN/AEI/10.13039/501100011033 (project CNS2023-143727)},
publisher = {Elsevier},
keywords = {Silicon-Germanium},
keywords = {Schottky barrier field-effect transistor},
keywords = {Electron transport},
title = {A Schottky barrier field-effect transistor platform with variable Ge content on SOI},
doi = {10.1016/j.sse.2025.109221},
author = {Fuchsberger, Andreas and Wind, Lukas and Pacheco-Sanchez, Anibal and Aberl, Johannes and Brehm, Moritz and Vogl, Lilian and Schweizer, Peter and Sistani, Masiar and Weber, Walter M.},
}