Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

Roldán Aranda, Juan Bautista; Gámiz Pérez, Francisco Jesús; López Villanueva, Juan Antonio; Carceller Beltrán, Juan Enrique

doi:10.1155/1998/26390

VLSI Design - 1998 - Roldan - Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization (1).pdf (580.8Kb)

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URI: https://hdl.handle.net/10481/98136

DOI: 10.1155/1998/26390

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Wiley

Date

1998-01-01

Referencia bibliográfica

Roldan, J. B., Gamiz, F., Lopez-Villanueva, J. A., Carceller, J. E., Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization, VLSI Design, 6, 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390

Abstract

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

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