@misc{10481/98136,
year = {1998},
month = {1},
url = {https://hdl.handle.net/10481/98136},
abstract = {A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.},
publisher = {Wiley},
title = {Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization},
doi = {10.1155/1998/26390},
author = {Roldán Aranda, Juan Bautista and Gámiz Pérez, Francisco Jesús and López Villanueva, Juan Antonio and Carceller Beltrán, Juan Enrique},
}