Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization Roldán Aranda, Juan Bautista Gámiz Pérez, Francisco Jesús López Villanueva, Juan Antonio Carceller Beltrán, Juan Enrique A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed. 2024-12-17T11:37:19Z 2024-12-17T11:37:19Z 1998-01-01 journal article Roldan, J. B., Gamiz, F., Lopez-Villanueva, J. A., Carceller, J. E., Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization, VLSI Design, 6, 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390 https://hdl.handle.net/10481/98136 10.1155/1998/26390 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Wiley