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Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

dc.contributor.authorRoldán Aranda, Juan Bautista 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.contributor.authorLópez Villanueva, Juan Antonio 
dc.contributor.authorCarceller Beltrán, Juan Enrique 
dc.date.accessioned2024-12-17T11:37:19Z
dc.date.available2024-12-17T11:37:19Z
dc.date.issued1998-01-01
dc.identifier.citationRoldan, J. B., Gamiz, F., Lopez-Villanueva, J. A., Carceller, J. E., Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization, VLSI Design, 6, 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390es_ES
dc.identifier.urihttps://hdl.handle.net/10481/98136
dc.description.abstractA Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.titleMonte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantizationes_ES
dc.typejournal articlees_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1155/1998/26390
dc.type.hasVersionVoRes_ES


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