Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

dc.contributor.author	Roldán Aranda, Juan Bautista
dc.contributor.author	Gámiz Pérez, Francisco Jesús
dc.contributor.author	López Villanueva, Juan Antonio
dc.contributor.author	Carceller Beltrán, Juan Enrique
dc.date.accessioned	2024-12-17T11:37:19Z
dc.date.available	2024-12-17T11:37:19Z
dc.date.issued	1998-01-01
dc.identifier.citation	Roldan, J. B., Gamiz, F., Lopez-Villanueva, J. A., Carceller, J. E., Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization, VLSI Design, 6, 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390	es_ES
dc.identifier.uri	https://hdl.handle.net/10481/98136
dc.description.abstract	A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	Wiley	es_ES
dc.rights	Atribución 4.0 Internacional	*
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/	*
dc.title	Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization	es_ES
dc.type	journal article	es_ES
dc.rights.accessRights	open access	es_ES
dc.identifier.doi	10.1155/1998/26390
dc.type.hasVersion	VoR	es_ES

Except where otherwise noted, this item's license is described as Atribución 4.0 Internacional