Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures

Gámiz Pérez, Francisco Jesús; Roldán Aranda, Juan Bautista; López Villanueva, Juan Antonio

doi:10.1155/1998/48528

VLSI Design - 1998 - Gámiz - Monte Carlo Simulation of Non‐Local Transport Effects in Strained Si on Relaxed Si1 xGex.pdf (492.9Kb)

Identificadores

URI: https://hdl.handle.net/10481/98133

DOI: 10.1155/1998/48528

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Editorial

Wiley

Materia

Strained Si layer

electron velocity overshoot

conduction effective mass reduction

Fecha

1998-01-01

Referencia bibliográfica

Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures, VLSI Design, 8, 048528, 4 pages, 1998. https://doi.org/10.1155/1998/48528

Resumen

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

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