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dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.contributor.authorRoldán Aranda, Juan Bautista 
dc.contributor.authorLópez Villanueva, Juan Antonio 
dc.date.accessioned2024-12-17T11:23:36Z
dc.date.available2024-12-17T11:23:36Z
dc.date.issued1998-01-01
dc.identifier.citationGámiz, F., Roldán, J. B., López-Villanueva, J. A., Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures, VLSI Design, 8, 048528, 4 pages, 1998. https://doi.org/10.1155/1998/48528es_ES
dc.identifier.urihttps://hdl.handle.net/10481/98133
dc.description.abstractElectron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.es_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectStrained Si layeres_ES
dc.subjectelectron velocity overshootes_ES
dc.subjectconduction effective mass reductiones_ES
dc.titleMonte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructureses_ES
dc.typejournal articlees_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1155/1998/48528
dc.type.hasVersionVoRes_ES


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