Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures Gámiz Pérez, Francisco Jesús Roldán Aranda, Juan Bautista López Villanueva, Juan Antonio Strained Si layer electron velocity overshoot conduction effective mass reduction Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes. 2024-12-17T11:23:36Z 2024-12-17T11:23:36Z 1998-01-01 journal article Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures, VLSI Design, 8, 048528, 4 pages, 1998. https://doi.org/10.1155/1998/48528 https://hdl.handle.net/10481/98133 10.1155/1998/48528 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Wiley