TY  - GEN 
AU  - Gámiz Pérez, Francisco Jesús
AU  - Roldán Aranda, Juan Bautista
AU  - López Villanueva, Juan Antonio
PY  - 1998
UR  - https://hdl.handle.net/10481/98133
AB  - Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail....
LA  - eng
PB  - Wiley
KW  - Strained Si layer
KW  - electron velocity overshoot
KW  - conduction effective mass reduction
TI  - Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures
DO  - 10.1155/1998/48528
ER  -