Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories
Identificadores
URI: https://hdl.handle.net/10481/91050Metadatos
Afficher la notice complèteDate
2023Referencia bibliográfica
Cuesta-López, Juan et al. Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories. 2023
Patrocinador
FEDER/Junta de Andalucía A-TIC-646-UGR20, P20-00633; Spanish Government MCIN/AEI/10.13039/501100011033: PID2020-116518GB-I00, TED2021-129769B-I00; NextGenerationEU/PRTR; PAIDI 2020; European Social Fund Operational Programme 2014–2020 no. 20804; FPU program FPU019/05132; EU H2020-MSCA-IF 2020Résumé
We simulate voltage-driven ion migration in gate oxides
as a potential mechanism to develop non-volatile
memories (NVMs) as appropriate candidates for
neuromorphic computing applications. Our study aims to
give insights about the impact of ion mobility and ion
concentration in the device memory window (MW).