Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories Cuesta-López, Juan Marín, Enrique G. Toral López, Alejandro Ganeriwala, Mohit Dineshkumar Ruiz, Francisco G. Pasadas Cantos, Francisco Godoy Medina, Andrés This work is funded by the FEDER/Junta de Andalucía through the projects A-TIC-646-UGR20 and P20-00633, and the Spanish Government MCIN/AEI/10.13039/501100011033 through the projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU program FPU019/05132, and M.D. Ganeriwala the EU through project H2020-MSCA-IF 2020. We simulate voltage-driven ion migration in gate oxides as a potential mechanism to develop non-volatile memories (NVMs) as appropriate candidates for neuromorphic computing applications. Our study aims to give insights about the impact of ion mobility and ion concentration in the device memory window (MW). 2024-04-23T08:02:32Z 2024-04-23T08:02:32Z 2023 info:eu-repo/semantics/conferenceObject Cuesta-López, Juan et al. Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories. 2023 https://hdl.handle.net/10481/91050 eng http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License