dc.contributor.author | Cuesta-López, Juan | |
dc.contributor.author | Marín, Enrique G. | |
dc.contributor.author | Toral López, Alejandro | |
dc.contributor.author | Ganeriwala, Mohit Dineshkumar | |
dc.contributor.author | Ruiz, Francisco G. | |
dc.contributor.author | Pasadas Cantos, Francisco | |
dc.contributor.author | Godoy Medina, Andrés | |
dc.date.accessioned | 2024-04-23T08:02:32Z | |
dc.date.available | 2024-04-23T08:02:32Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Cuesta-López, Juan et al. Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories. 2023 | es_ES |
dc.identifier.uri | https://hdl.handle.net/10481/91050 | |
dc.description | This work is funded by the FEDER/Junta de Andalucía
through the projects A-TIC-646-UGR20 and P20-00633,
and the Spanish Government
MCIN/AEI/10.13039/501100011033 through the
projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas
acknowledges funding from PAIDI 2020 and the
European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU
program FPU019/05132, and M.D. Ganeriwala the EU
through project H2020-MSCA-IF 2020. | es_ES |
dc.description.abstract | We simulate voltage-driven ion migration in gate oxides
as a potential mechanism to develop non-volatile
memories (NVMs) as appropriate candidates for
neuromorphic computing applications. Our study aims to
give insights about the impact of ion mobility and ion
concentration in the device memory window (MW). | es_ES |
dc.description.sponsorship | FEDER/Junta de Andalucía A-TIC-646-UGR20, P20-00633 | es_ES |
dc.description.sponsorship | Spanish Government MCIN/AEI/10.13039/501100011033: PID2020-116518GB-I00, TED2021-129769B-I00 | es_ES |
dc.description.sponsorship | NextGenerationEU/PRTR | es_ES |
dc.description.sponsorship | PAIDI 2020 | es_ES |
dc.description.sponsorship | European Social Fund Operational Programme 2014–2020 no. 20804 | es_ES |
dc.description.sponsorship | FPU program FPU019/05132 | es_ES |
dc.description.sponsorship | EU H2020-MSCA-IF 2020 | es_ES |
dc.language.iso | eng | es_ES |
dc.rights | Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License | es_ES |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/ | es_ES |
dc.title | Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories | es_ES |
dc.type | conference output | es_ES |
dc.rights.accessRights | open access | es_ES |