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Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories

dc.contributor.authorCuesta-López, Juan
dc.contributor.authorMarín, Enrique G.
dc.contributor.authorToral López, Alejandro 
dc.contributor.authorGaneriwala, Mohit Dineshkumar
dc.contributor.authorRuiz, Francisco G.
dc.contributor.authorPasadas Cantos, Francisco 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2024-04-23T08:02:32Z
dc.date.available2024-04-23T08:02:32Z
dc.date.issued2023
dc.identifier.citationCuesta-López, Juan et al. Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories. 2023es_ES
dc.identifier.urihttps://hdl.handle.net/10481/91050
dc.descriptionThis work is funded by the FEDER/Junta de Andalucía through the projects A-TIC-646-UGR20 and P20-00633, and the Spanish Government MCIN/AEI/10.13039/501100011033 through the projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU program FPU019/05132, and M.D. Ganeriwala the EU through project H2020-MSCA-IF 2020.es_ES
dc.description.abstractWe simulate voltage-driven ion migration in gate oxides as a potential mechanism to develop non-volatile memories (NVMs) as appropriate candidates for neuromorphic computing applications. Our study aims to give insights about the impact of ion mobility and ion concentration in the device memory window (MW).es_ES
dc.description.sponsorshipFEDER/Junta de Andalucía A-TIC-646-UGR20, P20-00633es_ES
dc.description.sponsorshipSpanish Government MCIN/AEI/10.13039/501100011033: PID2020-116518GB-I00, TED2021-129769B-I00es_ES
dc.description.sponsorshipNextGenerationEU/PRTRes_ES
dc.description.sponsorshipPAIDI 2020es_ES
dc.description.sponsorshipEuropean Social Fund Operational Programme 2014–2020 no. 20804es_ES
dc.description.sponsorshipFPU program FPU019/05132es_ES
dc.description.sponsorshipEU H2020-MSCA-IF 2020es_ES
dc.language.isoenges_ES
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs 3.0 Licensees_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es_ES
dc.titleVolatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memorieses_ES
dc.typeconference outputes_ES
dc.rights.accessRightsopen accesses_ES


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