@misc{10481/91050,
year = {2023},
url = {https://hdl.handle.net/10481/91050},
abstract = {We simulate voltage-driven ion migration in gate oxides
as a potential mechanism to develop non-volatile
memories (NVMs) as appropriate candidates for
neuromorphic computing applications. Our study aims to
give insights about the impact of ion mobility and ion
concentration in the device memory window (MW).},
organization = {FEDER/Junta de Andalucía  A-TIC-646-UGR20, P20-00633},
organization = {Spanish Government MCIN/AEI/10.13039/501100011033:  PID2020-116518GB-I00, TED2021-129769B-I00},
organization = {NextGenerationEU/PRTR},
organization = {PAIDI 2020},
organization = {European Social Fund Operational Programme 2014–2020 no. 20804},
organization = {FPU program FPU019/05132},
organization = {EU   H2020-MSCA-IF 2020},
title = {Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories},
author = {Cuesta-López, Juan and Marín, Enrique G. and Toral López, Alejandro and Ganeriwala, Mohit Dineshkumar and Ruiz, Francisco G. and Pasadas Cantos, Francisco and Godoy Medina, Andrés},
}