DFT-based layered dielectric model of few-layer MoS2
Metadatos
Mostrar el registro completo del ítemAutor
Donetti, Luca; Navarro Moral, Carlos; Márquez González, Carlos; Medina Bailón, Cristina; Padilla De la Torre, José Luis; Gámiz Pérez, Francisco JesúsEditorial
Elsevier
Materia
DFT MoS2 Dielectric constant
Fecha
2022-05-14Referencia bibliográfica
L. Donetti et al. DFT-based layered dielectric model of few-layer MoS2. Solid-State Electronics 194 (2022) 108346 [https://doi.org/10.1016/j.sse.2022.108346]
Patrocinador
H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme); TEC2017-89800-R (Spanish State Research Agency, AEI); P18-RT-4826 (Regional Government of Andalusia); B-TIC-515-UGR18 (University of Granada); Funding for open access charge: Universidad de Granada/ CBUAResumen
We employ atomistic calculations to study charge distribution in few-layer MoS2 structures with an applied
perpendicular electric field. The results suggest a simple continuum model consisting of alternating regions
which represent the semiconductor layers and the Van der Waals gaps between them. Such model is a first step
towards an accurate simulation of MoS2 in TCAD tools.