@misc{10481/75338,
year = {2022},
month = {5},
url = {http://hdl.handle.net/10481/75338},
abstract = {We employ atomistic calculations to study charge distribution in few-layer MoS2 structures with an applied
perpendicular electric field. The results suggest a simple continuum model consisting of alternating regions
which represent the semiconductor layers and the Van der Waals gaps between them. Such model is a first step
towards an accurate simulation of MoS2 in TCAD tools.},
organization = {H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme)},
organization = {TEC2017-89800-R (Spanish State Research Agency, AEI)},
organization = {P18-RT-4826 (Regional Government of Andalusia)},
organization = {B-TIC-515-UGR18 (University of Granada)},
organization = {Funding for open access charge: Universidad de Granada/ CBUA},
publisher = {Elsevier},
keywords = {DFT},
keywords = {MoS2},
keywords = {Dielectric constant},
title = {DFT-based layered dielectric model of few-layer MoS2},
doi = {10.1016/j.sse.2022.108346},
author = {Donetti, Luca and Navarro Moral, Carlos and Márquez González, Carlos and Medina Bailón, Cristina and Padilla De la Torre, José Luis and Gámiz Pérez, Francisco Jesús},
}