DFT-based layered dielectric model of few-layer MoS2 Donetti, Luca Navarro Moral, Carlos Márquez González, Carlos Medina Bailón, Cristina Padilla De la Torre, José Luis Gámiz Pérez, Francisco Jesús DFT MoS2 Dielectric constant The authors would like to thank the financial support of projects H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme), TEC2017-89800-R (Spanish State Research Agency, AEI), P18-RT-4826 (Regional Government of Andalusia) and B-TIC-515-UGR18 (University of Granada). Funding for open access charge: Universidad de Granada/ CBUA. We employ atomistic calculations to study charge distribution in few-layer MoS2 structures with an applied perpendicular electric field. The results suggest a simple continuum model consisting of alternating regions which represent the semiconductor layers and the Van der Waals gaps between them. Such model is a first step towards an accurate simulation of MoS2 in TCAD tools. 2022-06-08T10:41:42Z 2022-06-08T10:41:42Z 2022-05-14 info:eu-repo/semantics/article L. Donetti et al. DFT-based layered dielectric model of few-layer MoS2. Solid-State Electronics 194 (2022) 108346 [https://doi.org/10.1016/j.sse.2022.108346] http://hdl.handle.net/10481/75338 10.1016/j.sse.2022.108346 eng info:eu-repo/grantAgreement/EC/H2020/MSCA-IF-2019/895322 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess Atribución-NoComercial-SinDerivadas 3.0 España Elsevier