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DFT-based layered dielectric model of few-layer MoS2
dc.contributor.author | Donetti, Luca | |
dc.contributor.author | Navarro Moral, Carlos | |
dc.contributor.author | Márquez González, Carlos | |
dc.contributor.author | Medina Bailón, Cristina | |
dc.contributor.author | Padilla De la Torre, José Luis | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2022-06-08T10:41:42Z | |
dc.date.available | 2022-06-08T10:41:42Z | |
dc.date.issued | 2022-05-14 | |
dc.identifier.citation | L. Donetti et al. DFT-based layered dielectric model of few-layer MoS2. Solid-State Electronics 194 (2022) 108346 [https://doi.org/10.1016/j.sse.2022.108346] | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/75338 | |
dc.description | The authors would like to thank the financial support of projects H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme), TEC2017-89800-R (Spanish State Research Agency, AEI), P18-RT-4826 (Regional Government of Andalusia) and B-TIC-515-UGR18 (University of Granada). Funding for open access charge: Universidad de Granada/ CBUA. | es_ES |
dc.description.abstract | We employ atomistic calculations to study charge distribution in few-layer MoS2 structures with an applied perpendicular electric field. The results suggest a simple continuum model consisting of alternating regions which represent the semiconductor layers and the Van der Waals gaps between them. Such model is a first step towards an accurate simulation of MoS2 in TCAD tools. | es_ES |
dc.description.sponsorship | H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme) | es_ES |
dc.description.sponsorship | TEC2017-89800-R (Spanish State Research Agency, AEI) | es_ES |
dc.description.sponsorship | P18-RT-4826 (Regional Government of Andalusia) | es_ES |
dc.description.sponsorship | B-TIC-515-UGR18 (University of Granada) | es_ES |
dc.description.sponsorship | Funding for open access charge: Universidad de Granada/ CBUA | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Elsevier | es_ES |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | DFT | es_ES |
dc.subject | MoS2 | es_ES |
dc.subject | Dielectric constant | es_ES |
dc.title | DFT-based layered dielectric model of few-layer MoS2 | es_ES |
dc.type | journal article | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/H2020/MSCA-IF-2019/895322 | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1016/j.sse.2022.108346 | |
dc.type.hasVersion | VoR | es_ES |
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