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dc.contributor.authorDonetti, Luca 
dc.contributor.authorNavarro Moral, Carlos 
dc.contributor.authorMárquez González, Carlos 
dc.contributor.authorMedina Bailón, Cristina 
dc.contributor.authorPadilla De la Torre, José Luis 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2022-06-08T10:41:42Z
dc.date.available2022-06-08T10:41:42Z
dc.date.issued2022-05-14
dc.identifier.citationL. Donetti et al. DFT-based layered dielectric model of few-layer MoS2. Solid-State Electronics 194 (2022) 108346 [https://doi.org/10.1016/j.sse.2022.108346]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/75338
dc.descriptionThe authors would like to thank the financial support of projects H2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme), TEC2017-89800-R (Spanish State Research Agency, AEI), P18-RT-4826 (Regional Government of Andalusia) and B-TIC-515-UGR18 (University of Granada). Funding for open access charge: Universidad de Granada/ CBUA.es_ES
dc.description.abstractWe employ atomistic calculations to study charge distribution in few-layer MoS2 structures with an applied perpendicular electric field. The results suggest a simple continuum model consisting of alternating regions which represent the semiconductor layers and the Van der Waals gaps between them. Such model is a first step towards an accurate simulation of MoS2 in TCAD tools.es_ES
dc.description.sponsorshipH2020-MSCA-IF-2019 Ref. 895322 (EU Horizon 2020 programme)es_ES
dc.description.sponsorshipTEC2017-89800-R (Spanish State Research Agency, AEI)es_ES
dc.description.sponsorshipP18-RT-4826 (Regional Government of Andalusia)es_ES
dc.description.sponsorshipB-TIC-515-UGR18 (University of Granada)es_ES
dc.description.sponsorshipFunding for open access charge: Universidad de Granada/ CBUAes_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectDFTes_ES
dc.subjectMoS2es_ES
dc.subjectDielectric constantes_ES
dc.titleDFT-based layered dielectric model of few-layer MoS2es_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/MSCA-IF-2019/895322es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1016/j.sse.2022.108346
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España