Highly Reliable Quadruple-Node Upset-Tolerant D-Latch
Metadatos
Afficher la notice complèteAuteur
Hatefinasab, Seyedehsomayeh; Salinas Castillo, Alfonso; Castillo Morales, María Encarnación; Rodríguez Santiago, NoelEditorial
IEEE
Materia
Power-delay product (PDP) Soft errors (SE) Single event upset (SEU) High impedance state (HIS) Single event transient (SET) Dual interlocked storage cell (DICE) Triple path DICE (TPDICE) Quadruple-node upsets (QNUs)
Date
2022-03-17Referencia bibliográfica
S. Hatefinasab... [et al.]. "Highly Reliable Quadruple-Node Upset-Tolerant D-Latch," in IEEE Access, vol. 10, pp. 31836-31850, 2022, doi: [10.1109/ACCESS.2022.3160448]
Patrocinador
Spanish MCIN/AEI /10.13039/501100011033/ FEDER under Grant PID2020-117344RB-I00; Regional Government under Grant P20_00265 and Grant P20_00633Résumé
As CMOS technology scaling pushes towards the reduction of the length of transistors,
electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront
multiple-node upset errors due to their operation in harsh radiative environments. In this manuscript, a new
high reliable D-latch which can tolerate quadruple-node upsets is presented. The design is based on a low-cost
single event double-upset tolerant (LSEDUT) cell and a clock-gating triple-level soft-error interceptive
module (CG-SIM). Due to its LSEDUT base, it can tolerate two upsets, but the combination of two LSEDUTs
and the triple-level CG-SIM provides the proposed D-latch with remarkable quadruple-node upsets (QNU)
tolerance. Applying LSEDUTs for designing a QNU-tolerant D-latch improves considerably its features;
in particular, this approach enhances its reliability against process variations, such as threshold voltage and
(W/L) transistor variability, compared to previous QNU-tolerant D-latches and double-node-upset tolerant
latches. Furthermore, the proposed D-latch not only tolerates QNUs, but it also features a clear advantage
in comparison with the previous clock gating-based quadruple-node-upset-tolerant (QNUTL-CG) D-latch:
it can mask single event transients. Speci c gures of merit endorse the gains introduced by the new design:
compared with the QNUTL-CG D-latch, the improvements of the maximum standard deviations of the gate
delay, induced by threshold voltage and (W/L) transistors variability of the proposed D-latch, are 13.8%
and 5.7%, respectively. Also, the proposed D-latch has 23% lesser maximum standard deviation in power
consumption, resulting from threshold voltage variability, when compared to the QNUTL-CG D-latch.