Performance and reliability in back-gated CVD-grown MoS2 devices
Metadatos
Mostrar el registro completo del ítemAutor
Márquez González, Carlos; Salazar, Norberto; Gity, Farzan; Galdón, José Carlos; Navarro Moral, Carlos; Duffy, Ray; Hurley, Paul; Gamiz, Francisco JesúsEditorial
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Materia
Transition Metal Dichalcogenide Molybdenum Disulfide Two-Dimensional Materials More than Moore Low-frequency noise Reliability
Fecha
2021-08-19Referencia bibliográfica
Marquez, C., Salazar, N., Gity, F., Galdon, J.C., Navarro, C., Duffy, R., Hurley, P.,Gamiz, F., Performance and reliability in back-gated CVD-grown MoS2 devices, Solid-State Electronics (2021)
Patrocinador
European Union’sHorizon 2020 research and innovation programme under theMarie Skłodowska-Curie grant agreement No 895322; Spanish Government under Juan de la Cierva Formacion grantnumber FJC2018-038264-I; The Spanish Program (TEC2017-89800-R); ASCENT (EU Horizon 2020 GRANT 654384); Science Foundation Ireland: INVEST (SFI-15/IA/3131); Science Foundation Ireland: AMBER (12/RC/2278-P2)Resumen
In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitancevoltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.