@misc{10481/70021,
year = {2021},
month = {8},
url = {http://hdl.handle.net/10481/70021},
abstract = {In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitancevoltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.},
organization = {European Union’sHorizon 2020 research and innovation programme under theMarie Skłodowska-Curie grant agreement No 895322},
organization = {Spanish Government under Juan de la Cierva Formacion grantnumber FJC2018-038264-I},
organization = {The Spanish Program (TEC2017-89800-R)},
organization = {ASCENT (EU Horizon 2020 GRANT 654384)},
organization = {Science Foundation Ireland: INVEST (SFI-15/IA/3131)},
organization = {Science Foundation Ireland: AMBER (12/RC/2278-P2)},
publisher = {ELSEVIER},
keywords = {Transition Metal Dichalcogenide},
keywords = {Molybdenum Disulfide},
keywords = {Two-Dimensional Materials},
keywords = {More than Moore},
keywords = {Low-frequency noise},
keywords = {Reliability},
title = {Performance and reliability in back-gated CVD-grown MoS2 devices},
doi = {10.1016/j.sse.2021.108173},
author = {Márquez González, Carlos and Salazar, Norberto and Gity, Farzan and Galdón, José Carlos and Navarro Moral, Carlos and Duffy, Ray and Hurley, Paul and Gamiz, Francisco Jesús},
}