Performance and reliability in back-gated CVD-grown MoS2 devices Márquez González, Carlos Salazar, Norberto Gity, Farzan Galdón, José Carlos Navarro Moral, Carlos Duffy, Ray Hurley, Paul Gamiz, Francisco Jesús Transition Metal Dichalcogenide Molybdenum Disulfide Two-Dimensional Materials More than Moore Low-frequency noise Reliability In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitancevoltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response. 2021-09-01T07:39:57Z 2021-09-01T07:39:57Z 2021-08-19 journal article Marquez, C., Salazar, N., Gity, F., Galdon, J.C., Navarro, C., Duffy, R., Hurley, P.,Gamiz, F., Performance and reliability in back-gated CVD-grown MoS2 devices, Solid-State Electronics (2021) http://hdl.handle.net/10481/70021 10.1016/j.sse.2021.108173 eng http://creativecommons.org/licenses/by-nc/3.0/es/ open access Atribución-NoComercial 3.0 España ELSEVIER