Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework
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AuthorMedina Bailón, Cristina; Dutta, Tapas; Rezaei, Ali; Nagy, Daniel; Adamu-Lema, Fikru; Georgiev, Vihar; Asenov, Asen
Integrated simulation environmentDrift-DiffusionQuantum correctionKubo-GreenwoodNon-equilibrium Green’s functionNanowire transistors (NWT)Tunnel FETs (TFET)Negative Capacitance FETs (NCFET)Resonant tunneling diodes (RTD)
Medina-Bailon, C.; Dutta, T.; Rezaei, A.; Nagy, D.; Adamu-Lema, F.; Gergiev, V.P.; Asenov, A. Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework. Micromachines 2021, 12, 680. https:// doi.org/10.3390/mi12060680
SponsorshipEuropean Union Horizon 2020 - 688101 SUPERAID7; EPSRC UKRI Innovation Fellowship - EP/S001131/1 (QSEE), No. EP/P009972/1 (QUANTDEVMOD); H2020-FETOPEN-2019 s- No.862539-Electromed-FET OPEN.; No. EP/S000259/1(Variability PDK for design based research on FPGA/neuro computing)
The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called NanoElectronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a driftdiffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.